The Investigation of Characteristic and Reliability for 90nm SOI CMOSFETs with Strain Technology

• Main Authors: Chen-An Wang, 王振安
• Other Authors: Wen-Kuan Yeh
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/65469770568333916934

碩士 === 國立高雄大學 === 電機工程學系--先進電子構裝技術產業研發碩 === 96 === In this thesis, we investigate the impact of the strain technology on Characteristic and Reliability for 90nm SOI CMOSFET with Strain Technology. For nMOSFET, device driving capability can be improved by tensile CESL especially with thicker thickness. But higher interface and oxide defects were also induced by CESL, resulting in device degradation;thus, the thickness of the CESL must be optimized to enhance device performance without inducing defect. For reliability inspection, more serious hot-carrier-induced devices degradation happen on thicker CESL device due to higher impact ionization rate. However,we found that less serious PBI happened on nMOSFET with thicker CESL, which due presumably to suppression of oxide defect by CESL. For pMOSFET, in comparison with tensile CESL device, we found that compressive CESL device possess higher device driving capability. But higher CESL induced interface and oxide defects were found high compressive pMOSFET using low frequency analysis.In comparison with tensile CESL device, less serious NBI was found on pMOSFET, which due presumably to suppression of oxide defect by CESL.