low temperature synthesis of GaN nanowires by TEGa-DMHy MOCVD system
碩士 === 國立臺灣科技大學 === 化學工程系 === 96 === Gallium nitride (GaN) nanowires have been synthesized by metalorganic chemical vapor deposition (MOCVD) technique using dimethylhydrazine (DMHy) and triethylgallium (TEGa) as the reactants at low temperatures ranging from 480℃ to 655℃. Emphasis of this study is p...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04651723669477883945 |