Characterization of Inversion Tunneling Current for MOS Devices with High-k Gate Dielectrics
碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === The inversion tunneling current of MOS devices is composed of the generation current due to interface states, the generation-recombination current due to bulk traps, and the diffusion current from back contact. The generation-recombination current due to bulk tr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02153982514864814934 |