The Electrical Characteristics of the Electric-Field Directed Growth of Silicon Nanowires and Ohmic Contact Formation

• Main Authors: Yu-Fan Chen, 陳昱帆
• Other Authors: 李嗣涔
• Format: Others
• Language: en_US
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/82700579891688105497

碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === Electric-field-directed growth and self-assembly of undoped and lightly p-type doped silicon nanowires by chemical-vapor deposition via the vapor-liquid-solid (VLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD) system is demonstrated. The nanowires appeared to align with the localized DC electric field and grew across the gap between two electrodes. Moreover, it is found that titanium is an adequate electrode material for electric-field-directed growth of silicon nanowires, and good ohmic contact between SiNWs and Ti electrode is achieved by means of two stage rapid thermal anneal. With the application of focus ion beam assisted platinum deposition, the platinum pad is patterned on the silicon nanowire. Combined with Conductive-AFM and transmission line measurement, the measurement of the electrical characteristics of silicon nanowire and contact resistance between nanowire and Ti electrode is carried out.