Fabrication and Analysis of Low Temperature Poly-Si Thin Film Transistor and Flexible Electronics

博士 === 國立臺灣大學 === 電子工程學研究所 === 96 === A location-controlled lateral growth of polycrystalline silicon grain with underneath SiON heat absorption layer and top metal pads laser reflector fabricated by excimer laser annealing are studied. It is found the maximum lateral growth length of poly-Si can re...

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Bibliographic Details
Main Authors: Po-Chuan Yang, 楊伯川
Other Authors: 李嗣涔
Format: Others
Language:en_US
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/35485870319824230609