Study on the properties of GaAsSbN and the applications to Optoelectronic devices
碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === We have studied the effect of thermal annealing on the properties of GaAsSbN and the fabrication of GaAsSbN PIN devices. Passivation of Si and Be dopants in as-grown GaAsSbN was observed when the composition of nitrogen exceeded 1.7%. Although thermal annealing...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/96127189615274483761 |