Electric Conduction of Group IV Alloy and Group III-V as Metal Gate Device
碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === Abstract In this thesis, three topics are included. One is the direct band gap Ge1-xSnx alloys simulated by valence band anti-crossing method and nonlocal empirical pseudopotential method and the other is the Si-like (x<0.85) strained Si1-xGex N-MOSFETs mobi...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37951531957492049608 |