Analysis of STI-Induced Mechanical Stress-Related Kink Effects For Nanometer PD SOI CMOS Devices
碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === This thesis reports the STI-induced mechanical stress-related kink effect behaviour of the 40nm PD SOI NMOS device. As verified by the experimentally measured data and the 2D simulation results, the kink effect behaviour in the saturation region occurs at a high...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/62814365842848709142 |
| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === This thesis reports the STI-induced mechanical stress-related kink effect behaviour of the 40nm PD SOI NMOS device. As verified by the experimentally measured data and the 2D simulation results, the kink effect behaviour in the saturation region occurs at a higher VD for the 40nm PD device with a smaller S/D length of 0.17μm as compared to the one with the S/D length of 1.7μm due to the higher body-source bandgap narrowing effect on the parasitic bipolar device from the higher STI-induced mechanical stress, offset by the impact ionization enhanced by the bandgap narrowing in the high electric field region near the drain.
|
|---|