Analysis of STI-Induced Mechanical Stress-Related Kink Effects For Nanometer PD SOI CMOS Devices
碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === This thesis reports the STI-induced mechanical stress-related kink effect behaviour of the 40nm PD SOI NMOS device. As verified by the experimentally measured data and the 2D simulation results, the kink effect behaviour in the saturation region occurs at a high...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62814365842848709142 |