| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === This thesis reports the shallow-trench-isolation (STI)-induced mechanical-stress-related breakdown behavior of the nanometer PD-SOI NMOS device. Chapter 2 introduces the STI-induced mechanical stress. In chapter 3, as verified by the experimentally measured data and the 2D simulation results, the breakdown voltage becomes higher for the device with a smaller S/D length due to the weaker function of the parasitic bipolar device, offset by the stronger impact ionization in the post-pinchoff region. Chapter 4 derives the compact breakdown model. As verified by the experimentally measured data and the 2D simulaiton results, this compact breakdown model provides an accurate prediction. However, unlike the bulk MOSFET, the SOI MOSFET body floats due to the buried oxide structure and results in feedback mechanism between the impact ionization multiplication that takes place in the high-field region near the drain and the current gain of the parasitic bipolar structure. Chapter 5 is the conclusion of this research.
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