Analysis and Modeling of STI-Iduced Mechanical Stress-Related Breakdown Behavior For Nanometer PD-SOI MOS Devices
碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === This thesis reports the shallow-trench-isolation (STI)-induced mechanical-stress-related breakdown behavior of the nanometer PD-SOI NMOS device. Chapter 2 introduces the STI-induced mechanical stress. In chapter 3, as verified by the experimentally measured data...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43104204640319155054 |