Turn-on Transient Analysis and Hysteresis Behavior of PD SOI MOS Devices Using 2D simulation

Turn-on Transient Analysis and Hysteresis Behavior of PD SOI MOS Devices Using 2D simulation

碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === This thesis reports the analysis of the turn on transient and hysteresis behavior of 40 nanometers PDSOI device consider the STI induce mechanical stress。 Chapter 1 introduces the characteristic of the SOI Device and the shallow trench isolation（STI）induce mec...

Full description

Bibliographic Details
Main Authors: Hung-Che Hsieh, 謝宏哲
Other Authors: 郭正邦
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/02484971252250732776
id ndltd-TW-096NTU05428037
record_format oai_dc
spelling ndltd-TW-096NTU054280372016-05-11T04:16:25Z http://ndltd.ncl.edu.tw/handle/02484971252250732776 Turn-on Transient Analysis and Hysteresis Behavior of PD SOI MOS Devices Using 2D simulation 使用二維模擬器分析部份解離絕緣體上矽金氧半元件之電源導通暫態效應及磁滯現象 Hung-Che Hsieh 謝宏哲 碩士 國立臺灣大學 電子工程學研究所 96 This thesis reports the analysis of the turn on transient and hysteresis behavior of 40 nanometers PDSOI device consider the STI induce mechanical stress。 Chapter 1 introduces the characteristic of the SOI Device and the shallow trench isolation（STI）induce mechanical stress。 Chapter 2 discuss PDSOI turn-on transient analysis considering the different mechanical stress effect，based on the 2D simulation。 Chapter 3 discuss PDSOI hysteresis behavior considering the different mechanical stress effect and different temperature effect。 Chapter 4 is conclution。 郭正邦 2008 學位論文 ; thesis 61 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === This thesis reports the analysis of the turn on transient and hysteresis behavior of 40 nanometers PDSOI device consider the STI induce mechanical stress。 Chapter 1 introduces the characteristic of the SOI Device and the shallow trench isolation（STI）induce mechanical stress。 Chapter 2 discuss PDSOI turn-on transient analysis considering the different mechanical stress effect，based on the 2D simulation。 Chapter 3 discuss PDSOI hysteresis behavior considering the different mechanical stress effect and different temperature effect。 Chapter 4 is conclution。
author2 郭正邦
author_facet 郭正邦
Hung-Che Hsieh
謝宏哲
author Hung-Che Hsieh
謝宏哲
spellingShingle Hung-Che Hsieh
謝宏哲
Turn-on Transient Analysis and Hysteresis Behavior of PD SOI MOS Devices Using 2D simulation
author_sort Hung-Che Hsieh
title Turn-on Transient Analysis and Hysteresis Behavior of PD SOI MOS Devices Using 2D simulation
title_short Turn-on Transient Analysis and Hysteresis Behavior of PD SOI MOS Devices Using 2D simulation
title_full Turn-on Transient Analysis and Hysteresis Behavior of PD SOI MOS Devices Using 2D simulation
title_fullStr Turn-on Transient Analysis and Hysteresis Behavior of PD SOI MOS Devices Using 2D simulation
title_full_unstemmed Turn-on Transient Analysis and Hysteresis Behavior of PD SOI MOS Devices Using 2D simulation
title_sort turn-on transient analysis and hysteresis behavior of pd soi mos devices using 2d simulation
publishDate 2008
url http://ndltd.ncl.edu.tw/handle/02484971252250732776
work_keys_str_mv AT hungchehsieh turnontransientanalysisandhysteresisbehaviorofpdsoimosdevicesusing2dsimulation
AT xièhóngzhé turnontransientanalysisandhysteresisbehaviorofpdsoimosdevicesusing2dsimulation
AT hungchehsieh shǐyòngèrwéimónǐqìfēnxībùfènjiělíjuéyuántǐshàngxìjīnyǎngbànyuánjiànzhīdiànyuándǎotōngzàntàixiàoyīngjícízhìxiànxiàng
AT xièhóngzhé shǐyòngèrwéimónǐqìfēnxībùfènjiělíjuéyuántǐshàngxìjīnyǎngbànyuánjiànzhīdiànyuándǎotōngzàntàixiàoyīngjícízhìxiànxiàng
_version_ 1718265060578557952

Similar Items