Turn-on Transient Analysis and Hysteresis Behavior of PD SOI MOS Devices Using 2D simulation
碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === This thesis reports the analysis of the turn on transient and hysteresis behavior of 40 nanometers PDSOI device consider the STI induce mechanical stress。 Chapter 1 introduces the characteristic of the SOI Device and the shallow trench isolation（STI）induce mec...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02484971252250732776 |