Atomic Force Microscopy (AFM) based Method Applications in Ultra Large Scale Integrated Chip (ULSI) for Semiconductor Failure Analysis

• Main Authors: Kun Lin, 林坤
• Other Authors: Shey-Shi Lu
• Format: Others
• Language: en_US
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/17885638944989278453

碩士 === 臺灣大學 === 電子工程學研究所 === 96 === Atomic Force Microscopy (AFM) based method of this thesis was indicated and established for its possible applications in semiconductor investigation. Based on three successful published papers (ISTFA: International Symposium for Testing and Failure Analysis), the AFM system is clear and accurate to identify the semiconductor failure root cause and summarize these results. Multiple scanning probing microscopy methods were maturely developed and accomplished for advanced nanometer process investigation. E.g. Magnetic Force Microscopy, Scanning Capacitance Microscopy, Current-Mapping Conductive-AFM applications would be introduced and applied in this thesis. Six published semiconductor failure analysis cases were detailed described for each experiment in this thesis. Case-1: Thin LOCOS did not block implant induced P+ bridge caused DC standby high current failure. Case-2: N type dopant was found at P+ area caused single device fail. Case-3: Possible solution for well inspection in advanced nanometer process. Case-4: Bipolar Vertical PNP Beta Loss by silicide margin short fail issue. Case-5: CMOS Chip Power Leakage by photo-resistor bubble fail issue. Case-6: Nano-scale extra-shallow junctions suffered silicide roughness induced vertical junction leakage failure issue. Based on these real applications and evidences, AFM has been becoming a powerful and new generation technique for physical failure analysis investigation. This thesis would like to introduce each detail and research in the AFM based method application.