A Study on Hetero-epitaxial Growth of GaN and Diamond Films
博士 === 國立臺灣大學 === 材料科學與工程學研究所 === 96 === In this thesis, a TEM observation of dislocations in GaN grown on (0001) sapphire by MOCVD was carried out in this study. The GaN film was rotated 30o around the c axis in the growth plane against the substrate. The finding of this research, according to TEM...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48395126303657974660 |