Strain Release of InGaN/GaN Quantum Wells through Nano-hole Fabrication and Formation of Metal Particles for Surface Plasmon Study with the Anodic Aluminum Oxide Technique

碩士 === 國立臺灣大學 === 光電工程學研究所 === 96 === In this research, we fabricate anodic alumina oxide (AAO) on GaN and InGaN/GaN quantum well (QW) structure. With the AAO technique, we can fabricate a thin aluminum oxide film with nano-pore array on the nitride structure, which is used as a mask to deposit meta...

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Main Authors: Li-Guo Li, 李立國
Other Authors: Chih-Chung Yang
Format: Others
Language:en_US
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/64807688490105296426
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spelling ndltd-TW-096NTU051240652015-11-25T04:04:24Z http://ndltd.ncl.edu.tw/handle/64807688490105296426 Strain Release of InGaN/GaN Quantum Wells through Nano-hole Fabrication and Formation of Metal Particles for Surface Plasmon Study with the Anodic Aluminum Oxide Technique 以陽極氧化鋁技術於氮化銦鎵/氮化鎵量子井上製作奈米孔洞以釋放應變及產生表面電漿子奈米金屬顆粒之製備 Li-Guo Li 李立國 碩士 國立臺灣大學 光電工程學研究所 96 In this research, we fabricate anodic alumina oxide (AAO) on GaN and InGaN/GaN quantum well (QW) structure. With the AAO technique, we can fabricate a thin aluminum oxide film with nano-pore array on the nitride structure, which is used as a mask to deposit metal nano-particle arrays on to study the surface plasmon (SP) characteristics, or to release the strain in the QW. Our first study is about the SP characteristics of a silver or gold nano-particle array on GaN template. We change the AAO process condition to control the hole diameter and interpore distance such that we can vary the particle size and density of the metal nano-particle array. We observe the SP absorption spectra and its resonance frequencies of different particle sizes and densities. The second study is about the strain relaxation phenomenon by fabricating nano-hole array patterns with the AAO technique on an InGaN/GaN QW structure. The effective strain relaxation, leading to the significant enhancement of emission efficiency and reduction of quantum-confined Stark effect (QCSE), in a high-indium InGaN/GaN QW structure via nano-pore fabrication on the sample surface with the anodic aluminum oxide technique is demonstrated. By generating nano-pores of 60 nm in size, 4.71 x 109 cm-2 in pore density, and a depth several nm above the QW, the internal quantum efficiency (IQE) can be increased by about three times and the QCSE is reduced by 2.5 times while the emission spectrum is blue-shifted by 14 nm in the green range. With this approach, it is possible to achieve a higher IQE and a smaller QCSE by relaxing the built-in strain of a higher-indium QW structure and blue-shifting its emission, when compared with a lower-indium sample of the same emission spectrum as the blue-shifted one. Chih-Chung Yang 楊志忠 2008 學位論文 ; thesis 79 en_US
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language en_US
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description 碩士 === 國立臺灣大學 === 光電工程學研究所 === 96 === In this research, we fabricate anodic alumina oxide (AAO) on GaN and InGaN/GaN quantum well (QW) structure. With the AAO technique, we can fabricate a thin aluminum oxide film with nano-pore array on the nitride structure, which is used as a mask to deposit metal nano-particle arrays on to study the surface plasmon (SP) characteristics, or to release the strain in the QW. Our first study is about the SP characteristics of a silver or gold nano-particle array on GaN template. We change the AAO process condition to control the hole diameter and interpore distance such that we can vary the particle size and density of the metal nano-particle array. We observe the SP absorption spectra and its resonance frequencies of different particle sizes and densities. The second study is about the strain relaxation phenomenon by fabricating nano-hole array patterns with the AAO technique on an InGaN/GaN QW structure. The effective strain relaxation, leading to the significant enhancement of emission efficiency and reduction of quantum-confined Stark effect (QCSE), in a high-indium InGaN/GaN QW structure via nano-pore fabrication on the sample surface with the anodic aluminum oxide technique is demonstrated. By generating nano-pores of 60 nm in size, 4.71 x 109 cm-2 in pore density, and a depth several nm above the QW, the internal quantum efficiency (IQE) can be increased by about three times and the QCSE is reduced by 2.5 times while the emission spectrum is blue-shifted by 14 nm in the green range. With this approach, it is possible to achieve a higher IQE and a smaller QCSE by relaxing the built-in strain of a higher-indium QW structure and blue-shifting its emission, when compared with a lower-indium sample of the same emission spectrum as the blue-shifted one.
author2 Chih-Chung Yang
author_facet Chih-Chung Yang
Li-Guo Li
李立國
author Li-Guo Li
李立國
spellingShingle Li-Guo Li
李立國
Strain Release of InGaN/GaN Quantum Wells through Nano-hole Fabrication and Formation of Metal Particles for Surface Plasmon Study with the Anodic Aluminum Oxide Technique
author_sort Li-Guo Li
title Strain Release of InGaN/GaN Quantum Wells through Nano-hole Fabrication and Formation of Metal Particles for Surface Plasmon Study with the Anodic Aluminum Oxide Technique
title_short Strain Release of InGaN/GaN Quantum Wells through Nano-hole Fabrication and Formation of Metal Particles for Surface Plasmon Study with the Anodic Aluminum Oxide Technique
title_full Strain Release of InGaN/GaN Quantum Wells through Nano-hole Fabrication and Formation of Metal Particles for Surface Plasmon Study with the Anodic Aluminum Oxide Technique
title_fullStr Strain Release of InGaN/GaN Quantum Wells through Nano-hole Fabrication and Formation of Metal Particles for Surface Plasmon Study with the Anodic Aluminum Oxide Technique
title_full_unstemmed Strain Release of InGaN/GaN Quantum Wells through Nano-hole Fabrication and Formation of Metal Particles for Surface Plasmon Study with the Anodic Aluminum Oxide Technique
title_sort strain release of ingan/gan quantum wells through nano-hole fabrication and formation of metal particles for surface plasmon study with the anodic aluminum oxide technique
publishDate 2008
url http://ndltd.ncl.edu.tw/handle/64807688490105296426
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