Strain Release of InGaN/GaN Quantum Wells through Nano-hole Fabrication and Formation of Metal Particles for Surface Plasmon Study with the Anodic Aluminum Oxide Technique
碩士 === 國立臺灣大學 === 光電工程學研究所 === 96 === In this research, we fabricate anodic alumina oxide (AAO) on GaN and InGaN/GaN quantum well (QW) structure. With the AAO technique, we can fabricate a thin aluminum oxide film with nano-pore array on the nitride structure, which is used as a mask to deposit meta...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64807688490105296426 |