Study of the Effects of Post-growth Process on the Electrical and Optical Properties of Ⅲ-nitride Semiconductors Using Luminescence Measurement and Scanning Kelvin Probe Microscopy
碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 96 === Persistent photoluminescence (PL), PL, Cathodoluminescence (CL), Hall and scanning Kelvin probe microscopy (SKPM) measurements were performed to investigate the effects of sulphur treatment on the optical and electrical properties of n-GaN film by using 20% (NH...
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2008
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Online Access: | http://ndltd.ncl.edu.tw/handle/45888918721069850228 |