Study of the Effects of Post-growth Process on the Electrical and Optical Properties of Ⅲ-nitride Semiconductors Using Luminescence Measurement and Scanning Kelvin Probe Microscopy

碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 96 === Persistent photoluminescence (PL), PL, Cathodoluminescence (CL), Hall and scanning Kelvin probe microscopy (SKPM) measurements were performed to investigate the effects of sulphur treatment on the optical and electrical properties of n-GaN film by using 20% (NH...

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Bibliographic Details
Main Authors: Chaio-Yun Chang, 張巧芸
Other Authors: Tai-Yuan Lin
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/45888918721069850228