A Study of Pb1.1Zr0.52Ti0.48O3 Thin Film Ultrasonic Sensor Array

• Main Authors: Yi-Chun Hsieh, 謝逸群
• Other Authors: Chung-Cheng Chang
• Format: Others
• Language: en_US
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/95549005849074436512

碩士 === 國立臺灣海洋大學 === 電機工程學系 === 96 === Topic of this paper is the study of PZT（Pb1.1Zr0.52Ti0.48O3）thin film ultrasonic array devices, and its aim is the development of thin film ultrasonic array devices by using semiconductor manufacturing technology. The research was carried out in two directions: (1) The research and development of thin film ultrasonic transmitting array. The number of elements of transmitting array is three, and the transmitting distance is about 10cm. (2) The research and development of thin film ultrasonic receiving array. The number of elements of receiving array is sixteen, and the receiving distance is about 15cm. Materials used by us include Si substrate , SiO2, LNO, PZT and Pt, and LNO and Pt serve as the top and bottom electrodes of transmitting/receiving arrays. The fabrication of the thin film is completed by means of RF magnetron sputtering. LNO deposit rate is 700 nm/hr，deposit time 30 min，deposit thickness is 350 nm，annealing temperature is 650℃，annealing time is 10 min. PZT deposit rate is 655 nm/hr，deposit time is 90min，deposit thickness is 1000 nm，annealing temperature is 500℃，annealing time is 20 min. Pt deposit rate is 100 nm/min，deposit time 2 min，deposit thickness is 200 nm. PZT thin film piezoelectric constant d is 320×10-12m/v，d is -140×10-12m/v，g is 10-12m/v，g is 10-12m/v，K is 0.58，K is 0.45，K is 0.34，ρ is 7.9 g/cm3.