| Summary: | 碩士 === 國立臺灣海洋大學 === 電機工程學系 === 96 === The material investigated in this research, RuO2-Al2O3, has a relatively higher temperature coefficient of resistance, so it has its importance as a thermistor material upon the fabrication of uncooled thermal infrared bolometer. In the fabrication of thermal infrared bolometer KOH was used to wet etch the silicon substrate; etching the Si substrate to form groove structures. Further, to gain a good insulation RuO2-Al2O3 was deposited with a RF sputtering system on to the Si3N4 thin film above the groove structure. On the other hand, electrode wiring adopts a method of attaching 8 wires each for both top and bottom electrode; this forms an array interlacing method producing a 8x8 arrayed thermal infrared bolometer. Analysis and measurements were then performed on this component.
Pertaining to RuO2-Al2O3 thin film, from the measurements of R-T curve and annealing analysis we acknowledged that TCR values of -1.55%/K can be reached through a RuO2-Al2O3 thin film deposition temperature of 120℃ with a deposition pressure of 1.7×10-2 torr. The RuO2-Al2O3 thin film component was placed in an aluminum box then connected to a 1MΩ resistor with a 5V DC source supplying the circuit; here its characteristics under 10mW He-Ne laser illumination and various frequencies were determined from the electrical signals. In the determination of optimum parameters for uncooled thermal infrared bolometers, a response time of 1.08 msec at 1Hz with a maximum responsivity of 1462.4(VW-1) was derived under an operating temperature of 300 k and chopper frequency of 1~55Hz. This value decreases linearly with increasing chopper frequency. According to the acquired responsivity and noise voltage, a maximum detectivity, D*, of 4.1×107 cmHz1/2/W was derived. Beyond 35Hz, this value decreases with increasing chopper frequency.
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