Silicon Nanowire Field Effect Transistor

碩士 === 國立臺灣師範大學 === 光電科技研究所 === 96 === As semiconductor devices are scaled into to the deep submicron meter regime, surrounding-gated silicon on insulator metal-oxide-semiconductor field effect transistors have shown promise in both the short-channel effect and in achieving a nearly ideal subthresho...

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Bibliographic Details
Main Authors: Lin Ting Yu, 林庭宇
Other Authors: Hu Shu Fen
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/3kg2wf