Characterization and Analysis for 65-nm RF MOSFETs

碩士 === 國立清華大學 === 電子工程研究所 === 96 === With the growing popularity of portable wireless units, the consumer and electronic industry demand for high performance, high integration, and low cost transistors. The RF devices and integrated circuits were dominated by III-V based technologies owning to their...

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Bibliographic Details
Main Authors: San-Chuan Chen, 陳三權
Other Authors: Shuo-Hung Hsu
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/96879412672730560247