Flicker Noise Characterization and Modeling for RF MOSFETs
博士 === 國立清華大學 === 電子工程研究所 === 96 === The geometry effect on the flicker noise characteristics in 0.13-um single-finger and multi-finger RF MOSFETs are studied in this dissertation. First, by symmetrically extending the distance between the shallow-trench-isolation (STI) to the gate, both single-fing...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60643766334995371272 |