The Design and Fabrication of High Voltage 4H-SiC Schottky Diode
碩士 === 國立清華大學 === 產業研發碩士積體電路設計專班 === 96 === The main purpose of this thesis is to fabricate a high voltage 4H-SiC schottky diode. The conventional schottky barrier diodes (SBDs) typically have large leakage current when they are biased in a reverse condition, and their breakdown voltage is low. In o...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99491784607274280897 |