以分子束磊晶成長氧化鋁/氧化鎵(氧化釓)/砷化銦鎵/砷化鎵金氧半電容之氧化層微縮特性研究與以原子層沉積術成長氧化鋁/砷化銦鎵/砷化鎵金氧半場效電晶體之製程與特性研究
碩士 === 國立清華大學 === 材料科學工程學系 === 96 === Part (I): Oxide Scalability An equivalent oxide thickness about 1 nm for molecular beam epitaxy (MBE)-grown Ga2O3(Gd2O3) (GGO) on In0.2Ga0.8As has been achieved by employing a thin in situ deposited 3 nm thick Al2O3 protection layer. The novel hetero-structures...
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/10653664748931297197 |