| Summary: | 碩士 === 國立清華大學 === 材料科學工程學系 === 96 === In this work, Ti-doped diamond like carbon thin films (DLC) were synthesized by two methods. In the first method, Ti was incorporated into DLC by a metal vapor vacuum arc system (MeVVA). In the second method, Ti-doped DLC was synthesized by filtered a cathodic vacuum arc plasma system (FCVA). Since the structure of Ti-doped DLC was destroyed by high-energy ion implantation, annealing was used to recover the structure of Ti-doped DLC. The XPS analysis demonstrates that C 1s core-level of Ti-doped DLC incorporated by MeVVA shifts towards lower binding energy. The auger electronic spectra show that the depth-profiles in these methods are different. From the TEM observation, nano-crystalline clusters appear in Ti-doped DLC incorporated by MeVVA, and a multi-layer structure appears in the Ti-doped DLC synthesized by FCVA. The Raman spectra show that ID/IG ratio increase with the Ti content. The rising ratio implies that the sp3 bonds increase with Ti content. The extremely low surface roughness and improved electrical conductivity show that Ti-doped DLC has practical applications.
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