Growth, Fabrication, and Characterization of InN Semiconductor and Its Nanostructures on Silicon Substrate
博士 === 國立清華大學 === 材料科學工程學系 === 96 === We have successfully grown wurtzite-phase InN epitaxial layers on Si(111) substrates using atomically flat AlN intermediate layers. Both hetero-interfaces were found to be abrupt based on the field emission scanning electron microscopy and transmission electron...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62588231997196929536 |