Novel MOSFETs with Internal Block Layers for Suppressing Short Channel Effects and Improving Thermal Instability
碩士 === 國立中山大學 === 電機工程學系研究所 === 96 === In this paper, several new MOSFET devices, vertical MOSFET with L-shaped internal block layers (bVMOS), planar MOSFET with self-aligned internal block layers (bMOS), and Silicon-Germanium MOSFET with self-aligned internal block layers (bSGMOS) are presented. We...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/x59z66 |