Water-assisted Liquid Phase Deposited Fluorinated Silicon Oxide on Amorphous Silicon
碩士 === 國立中山大學 === 電機工程學系研究所 === 96 === In this study, SiO2-xFx films were deposited on Si and amorphous silicon, their physical and chemical properties were measured. An Al/ SiO2-xFx /Si and Al/ SiO2-xFx/a-Si/Si MOS structures were used for the electrical measurements. To improve the electrical prop...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/839m5f |
| Summary: | 碩士 === 國立中山大學 === 電機工程學系研究所 === 96 === In this study, SiO2-xFx films were deposited on Si and amorphous silicon, their physical and chemical properties were measured. An Al/ SiO2-xFx /Si and Al/ SiO2-xFx/a-Si/Si MOS structures were used for the electrical measurements. To improve the electrical properties, we investigated the characteristics of SiO2-xFx films after annealing in nitrogen and oxygen ambient.
We can find the leakage current density can be reduced to about 1.09× 10-6 A/cm2 and 1.03× 10-7 at -1 MV/cm and at 1 MV/cm after annealing in oxygen ambient. Although the leakage current is improved one order but the dielectric constant is increase.
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