| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 96 === 20 periods AlN/GaN distributed Bragg reflector (DBR) nanorod structure has been grown on Si (111) substrates at 780℃ by plasma-assisted molecular beam epitaxy (PAMBE) under highly N-rich conditions. The AlN/GaN DRB nanorod structure started with 637 nm high GaN nanorod directly grown on Si (111). Diameter of nanorod is around 80 nm. The height of nanorod is around 3.3 μm, the density of nanorods is around 2×1010 cm-2, and the thickness of each layer are around 44 nm and 58 nm for AlN and GaN, respectively. The nanorod had been analyzed by temperature dependent cathodoluminescence (CL),
scanning electron microscopy (SEM), and transmission electron microscopy (TEM), X-ray diffraction (XRD) measurement.
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