Plasma-Assisted Molecular-Beam-Epitaxy growth and Cathodoluminescence study of GaN/AlN Distributed-Bragg-Reflector Nanorod Structure
碩士 === 國立中山大學 === 物理學系研究所 === 96 === 20 periods AlN/GaN distributed Bragg reflector (DBR) nanorod structure has been grown on Si (111) substrates at 780℃ by plasma-assisted molecular beam epitaxy (PAMBE) under highly N-rich conditions. The AlN/GaN DRB nanorod structure started with 637 nm high GaN n...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/p5yhw2 |