Growth behavior of electroless Ni-Co-P deposits

• Main Authors: Yu-Ching Hsu, 許育菁
• Other Authors: Wen-Jauh Chen
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/65295334060057946062

碩士 === 國立屏東科技大學 === 材料工程所 === 96 === Various electroless Ni-Co-P deposits were formed on silicon substrate in electroless baths using sodium hypophosphoric as reducing agent and nickel and cobalt sulphates as ion source at pH value of 9 and temperature from 55 to 85 ℃. The effect of atomic ratio of Co to Ni+Co in bath on the growth behavior of electroless Ni-Co-P deposit was studied. The various electroless Ni-Co-P deposits were characterized by transmission electron microscopy for microstructures and thickness of deposits, and energy dispersion spectroscopy for composition. The results showed that the growth rate of electroless Ni-Co-P deposit is generally increased with increase in bath temperature for every atomic ratio of Co to Ni+Co in bath; The higher the atomic ratio of Co to Ni+Co in bath, the higher the growth rate of electroless Ni-Co-P deposit for every bath temperature and the higher the activation energy of electroless Ni-Co-P deposition. When increase in metallic ratio, the cobalt content of the deposits increases with a simultaneous decrease in the nickel content, while the phosphorus content decreases slightly.