Surface analysis of the Ⅲ-Ⅴ compounds semiconductor materials
碩士 === 國立東華大學 === 光電工程研究所 === 96 === We often use the passivation to flat the semiconductor surface and prevent the surface affected by outside condition. Passivation has two methods: sulfide and nitride. We passivated our sample HEMT and HBT (we called: ST08022&Double Hetrojunction Bipolar Tran...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83746622726108370420 |