Optical characterization of AlGaAs/InGaAs/GaAs high electron mobility transistors by using photoluminescence and photoreflectance spectroscopy
碩士 === 國立東華大學 === 光電工程研究所 === 96 === The optical properties of AlGaAs/InGaAs/GaAs high electron mobility transistors with two different channel-band structures are characterized by using photoluminescence (PL) and photoreflectance (PR). The difference of these two samples is that one has a uniform c...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/988b42 |