Fabrication and characterization of the

• Main Authors: Sen-Huei Chen, 陳森輝
• Other Authors: Jong-Ching Wu
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/11346703929600812278

碩士 === 國立彰化師範大學 === 光電科技研究所 === 96 === In this thesis, the micron-scaled toroidal inductors have been fabricated successfully by using standard photolithography in conjunction with a lift-off technique. The toroidal inductors with various size and dielectric layer thickness were designed and fabricated with two sets of inclined metal bars and a ring-shaped core of SiO2 was inserted in-between like a sandwich structure. Care was taken for the alignment between three steps of photolithography to be within micron scales. Subsequently, frequency dependent quality factor and inductance was investigated using the 50 GHz S-parameter Measurement System with directly standard two terminal Ground-Signal-Ground (GSG) microprobes on RF probe-station to study the characteristics of inductors with various size and dielectric layer thickness. For sample calibration and de-embedding, a SOLT calibration procedure was performed by means of a standard calibration substrate; moreover, a pad de-embedding procedure was also carried out using an integrated open structure for extracting DUT S-parameters. The results show that the dielectric layer thickness and device size will be effect the inductor characteristics. The inductance of devices increased with increasing diameters and we can achieve the highest inductance up to 10.5 nH with dimension of 960um. In addition, the Q-factor of devices increased as dielectric layer thickness increasing and the highest Q-factor is up to 180. The improved performance of the toroidal inductors is because that the structure can restrain magnetic flux intersecting the substrate and reduce the device area effectively.