脈衝磁控濺鍍製備ZnO:Mo薄膜及其表面粗化之研究

• Main Author: 王柏霖
• Other Authors: 林義成
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/93597097844438590899

碩士 === 國立彰化師範大學 === 機電工程學系 === 96 === The purpose of this discourse was prepared MZO (ZnO:Mo) thin film by PMS (Pulse magnetron sputter), and then we used chemical wet etching to observed the effect of diffuse transmittance and electrical properties. First, changed the content of Mo element by different position of molybdenum sheet on ZnO ceramic target to deposit MZO film on glass substrate (Corning 1737). The structural, electrical and optical properties as a fuction of sputtering power, working pressure, pulse frequency, thin film thickness and substrate temperature were investigated. Second, ligh trapping structure of MZO thin film can be prepared by two kinds of etchant at varying the etching time, then discussing the effect of electrical, light scattering and transmittance properties. In the experiment, the film thickness and deposited rate were measured by a profilometer. The content of composition was measured by Energy dispersive spectrometer (EDS). Resistivity, carrier density and carrier mobility were measured by Hall effect measurement system. The analyse of crystallinity was measured by X-ray diffraction (XRD). Analyse of chemical valence was measured by X-ray photoelectron spectroscope (XPS). Surface texture was observed by thermal field emission scanning electron microscope (TF-SEM). Transmittance was measured by spectrometer. Total transmittance and Specular transmittance were measured by angle changeable optical characteristic measurement system to calculated diffuse transmittance. Result, The MZO film showed with the lowest resistivity was prepared by Mo concentration 1.77 wt.%, sputtering power 100W, working pressure 0.4Pa, pulse frequency 10kHz, thin film thickness 500nm at room temperature that showed a resistivity of 8.9×10-4Ωcm and a transmittance of 80% in the visible range. 0.5％HCl and 33％KOH etched 800nm thickness of MZO thin film. At the same thickness, the surface smooth, cavitation decreased and lower resistivity were etched by 33％KOH. Considering electrical, light scattering and transmittance properties, we choosed 0.5％HCl to etch MZO film during 3~6 second. Finally, we can get resistivity of 1.74~2.75×10-3Ωcm, total transmittance of 67~73% in the visible range, diffuse transmittance of 25.1~28.4% in the visible range and haze value between 0.32 to 0.42 for front electrode application of thin film solar cells.