| Summary: | 碩士 === 國立中央大學 === 電機工程研究所 === 96 === ASTRACT
This thesis presents an equivalent circuit approach for development of 1-D and 2-D Schottky Diode Device Simulation. For an equivalent circuit approach, we will convert the traditional semiconductor device’s drift-diffusion model into an equivalent circuit model. Therefore, the device simulation will be changed into the circuit simulation, not only we can use a circuit simulator to make device simulation, but also we can combine the external circuit for the mixed-level simulation. First, we will show 1D and 2D equivalent circuit models. After that, we put them into our circuit simulator. We will show current-voltage, energy band, and C-V simulation.
Then, we will use an Electrode Separation method to measure the accurate capacitance, current-voltage, energy band, and to prove Electrode Separation method and without Electrode Separation method are the same. Finally, by the use of this technique, it’s helpful for us to investigate the interactions between semiconductor devices and circuits in which they are embedded from physical point of view.
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