Development of 1-D and 2-D Schottky Diode Device Simulation Using Equivalent-circuit Model
碩士 === 國立中央大學 === 電機工程研究所 === 96 === ASTRACT This thesis presents an equivalent circuit approach for development of 1-D and 2-D Schottky Diode Device Simulation. For an equivalent circuit approach, we will convert the traditional semiconductor device’s drift-diffusion model into an equivalent c...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5n94v2 |