The Investigation of Dynamic, Power and Noise Characteristics on SiGe Heterojunction Bipolar Transistors
博士 === 國立中央大學 === 電機工程研究所 === 96 === With the technological advances, the Si-based SiGe HBTs was already developed to over 350 GHz. The low cost of fabrication, high integration with CMOS process and the possibility of placing both analog and digital circuits on the same chip so as to improve the ov...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/zq454b |