Linearity Improvement of InGaP/GaAs HBTs and Characterization of InP-based Type-I/II HBTs
博士 === 國立中央大學 === 電機工程研究所 === 96 === Heterojunction Bipolar Transistors (HBTs) proposed to improve the emitter efficiency by base-emitter (BE) heterojunction in 1958s. The GaAs-based and InP-based HBTs were implemented as the material growth techniques of MOCVD and MBE became mature in 1980s. In rec...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9q3hpp |