| Summary: | 碩士 === 國立中央大學 === 化學工程與材料工程研究所 === 96 === A promising thin-GaN light emitting diodes (LEDs) structure, different from conventional GaN-based LED, have been developed by laser lift-off (LLO) and wafer bonding processes, also have better current spreading and thermal dispersion abilities. The key application of thin-GaN LED structure is used for high-power general lighting. Under high current in-put, the current density distribution will become a significant factor to affect lighting performance (internal quantum efficiency) of thin-GaN LED chip.
The characteristics of the current spreading in the conventional wire bonded LED structure have been well studied. An exponential decrease in the current density with increasing distance away from the mesa edge was observed. Yet, for thin-GaN LED, the current spreading characteristics have not been addressed properly. In this study, we will present the current spreading characteristics of thin-GaN LED, and calculate the internal quantum efficiency (IQE) by using current spreading length.
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