Influence of Current Spreading on Internal Quantum Efficiency in GaN-LED
碩士 === 國立中央大學 === 化學工程與材料工程研究所 === 96 === A promising thin-GaN light emitting diodes (LEDs) structure, different from conventional GaN-based LED, have been developed by laser lift-off (LLO) and wafer bonding processes, also have better current spreading and thermal dispersion abilities. The key app...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/87545486905179239916 |