Study of N-type LTPS TFTs Degradation under Gate Pulse Stress in ON Region with Drain Bias
碩士 === 國立交通大學 === 電機學院光電顯示科技產業專班 === 96 === The purpose of this thesis is to study the degradation behavior of N-type poly-Si TFTs under AC operation. It differs from previous studies, the characteristics of poly-Si TFTs under gate pulse AC operation in the ON region with drain bias are investigated...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41836434076228847831 |