The Application of Amorphous Carbon on Poly Silicon Laser Crystallization
碩士 === 國立交通大學 === 顯示科技研究所 === 96 === Grain boundaries(GBs) in channel region will influence the poly-Si TFT performance severely, GBs will lower the carrier mobility and increase the off state leakage-current. In order to reduce these effects, we utilized an additional heat retaining enhanced cryst...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2007
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Online Access: | http://ndltd.ncl.edu.tw/handle/35999268204893663475 |