The study of plasma treatment on HfAlO gate dielectrics
碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 96 === When the MOSFET gate insulator is scaled below 1.2 nm, SiO2 as the gate insulator will has some serious problems such as direct tunneling. The moore’s law will face difficult condition to continue constantly. Therefore, high dielectric constant material i...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/pn38kk |