A Program-Erasable High-κ Hf3N2O5 Metal-Insulator-Silicon Capacitor
碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 96 === Memory cell capacitance is the crucial parameter which determines the sensing signal voltage, speed, data retention times, endurance and against the soft error event. However, the very large scale integration (VLSI) technology is continues down-scaling of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6ned4b |