| Summary: | 碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 96 === In this thesis, we investigated the characteristics of strained-channel NMOSFETs with different thickness of silicon nitride (SiN) capping layer deposited by plasma enhanced chemical vapor deposition (PECVD) system. We found that thicker SiN capping would result in higher tensile stress in the underlying channel and leading to a higher mobility. Therefore, higher performance enhancement was observed for devices with thicker SiN capping. However, the increased mobility and the SiN deposition process would aggravate the hot carrier reliability, resulting in the severest hot carrier degradation for the samples with the thickest SiN capping. The analysis of Fourier transform infrared spectrometer (FTIR) was also investigated. The extra Si-H bonds were observed, indicating that PECVD SiN indeed has abundant hydrogen species.
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