Performance and Reliability of Strained NMOSFETs with SiN Capping Layer
碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 96 === In this thesis, we investigated the characteristics of strained-channel NMOSFETs with different thickness of silicon nitride (SiN) capping layer deposited by plasma enhanced chemical vapor deposition (PECVD) system. We found that thicker SiN capping would...
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| Format: | Others |
| Language: | en_US |
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2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94490529133954945153 |