The Growth and Characterization of Group III-nitride Microstructures
博士 === 國立交通大學 === 電子物理系所 === 96 === This thesis elucidates the macroscopic and microscopic electrical properties of the GaN epilayer. First, Si-modulation doping layers (Si-MDLs)are used to reduce the dislocation density to less than 108 cm-2 and improve electron mobility to 322 cm2/V-s Analysis of...
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| Format: | Others |
| Language: | en_US |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06946522798375978631 |