Influences of growth interruption on InN islands grown by MOCVD
碩士 === 國立交通大學 === 電子物理系所 === 96 === We introduced repetitive growth interruptions for successfully growth of InN dots without In droplets at 700 oC once interruption time at each cycle exceeds 15 seconds. Total amount of indium atoms at droplet-existing and droplet-free regime are valued at 3.96±0.3...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24255220432401967360 |